AOU3N50N-Channel 500 V 2.8A (Tc) 57W (Tc) Through Hole TO-251-3
1:$0.5310
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-AOU3N5-672547
ManufacturerAlpha & Omega Semiconductor
MPN #.AOU3N50
Estimated Lead Time-
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Datasheet
AO(D,U)3N50(PDF)
AO(D,U)3N50(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.5310
Ext. Price$ 0.5310
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5310$0.5310
80$0.3160$25.2800
560$0.2640$147.8400
1040$0.2250$234.0000
2000$0.2000$400.0000
5040$0.1900$957.6000
10000$0.1760$1760.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberAOU3
Continuous Drain Current (ID) @ 25°C2.8A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)331 pF @ 25 V
MfrAlpha & Omega Semiconductor Inc.
Mounting StyleThrough Hole
Operating Temperature-50°C ~ 150°C (TJ)
Maximum Power Dissipation57W (Tc)
RDS(on) Drain-to-Source On Resistance3Ohm @ 1.5A, 10V
Package Type (Mfr.)TO-251-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Product Drawings
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)