AOTF66616LN-Channel 60 V 38A (Ta), 72.5A (Tc) 8.3W (Ta), 30W (Tc) Through Hole TO-220F
1:$2.1880
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-AOTF66-677297
ManufacturerAlpha & Omega Semiconductor
MPN #.AOTF66616L
Estimated Lead Time16 Weeks
SampleGet Free Sample
Datasheet
AOTF66616L(PDF)
AOTF66616L(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 2.1880
Ext. Price$ 2.1880
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.1880$2.1880
50$1.7600$88.0000
100$1.4480$144.8000
500$1.2260$613.0000
1000$1.0390$1039.0000
2000$0.9880$1976.0000
5000$0.9510$4755.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesAlphaSGT™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberAOTF66616
Continuous Drain Current (ID) @ 25°C38A (Ta), 72.5A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)60 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2870 pF @ 30 V
MfrAlpha & Omega Semiconductor Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation8.3W (Ta), 30W (Tc)
RDS(on) Drain-to-Source On Resistance3.3mOhm @ 20A, 10V
Package Type (Mfr.)TO-220F
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.4V @ 250µA
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)