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AOT42S60LN-Channel 600 V 37A (Tc) 417W (Tc) Through Hole TO-220
1:$4.7790
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-AOT42S-641061
ManufacturerAlpha & Omega Semiconductor
MPN #.AOT42S60L
Estimated Lead Time-
SampleGet Free Sample
DatasheetAOx(F)42S60(PDF)
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In Stock: 11872
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 4.7790
Ext. Price$ 4.7790
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.7790$4.7790
10$4.0100$40.1000
100$3.2440$324.4000
500$2.8840$1442.0000
1000$2.4690$2469.0000
2000$2.3250$4650.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 80 V 11A (Ta), 65A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-DFN (5x6) Technical Specifications
SeriesaMOS™
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberAOT42
Continuous Drain Current (ID) @ 25°C37A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2154 pF @ 100 V
MfrAlpha & Omega Semiconductor Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation417W (Tc)
RDS(on) Drain-to-Source On Resistance99mOhm @ 21A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.8V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)