AOT266LN-Channel 60 V 18A (Ta), 140A (Tc) 2.1W (Ta), 268W (Tc) Through Hole TO-220
1:$1.8670
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-AOT266-634607
ManufacturerAlpha & Omega Semiconductor
MPN #.AOT266L
Estimated Lead Time18 Weeks
SampleGet Free Sample
Datasheet
AO(T,B)266L(PDF)
AO(T,B)266L(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 1.8670
Ext. Price$ 1.8670
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.8670$1.8670
50$1.5020$75.1000
100$1.2360$123.6000
500$1.0460$523.0000
1000$0.8870$887.0000
2000$0.8430$1686.0000
5000$0.8110$4055.0000
10000$0.7850$7850.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberAOT266
Continuous Drain Current (ID) @ 25°C18A (Ta), 140A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)90 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5650 pF @ 30 V
MfrAlpha & Omega Semiconductor Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation2.1W (Ta), 268W (Tc)
RDS(on) Drain-to-Source On Resistance3.5mOhm @ 20A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.2V @ 250µA
Package / CaseTO-220-3
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Product Drawings
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)