AOT20N60LN-Channel 600 V 20A (Tc) 417W (Tc) Through Hole TO-220
1:$1.1260
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ABRmicro #.ABR2045-AOT20N-633016
ManufacturerAlpha & Omega Semiconductor
MPN #.AOT20N60L
Estimated Lead Time-
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 1.1260
Ext. Price$ 1.1260
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1000$1.1260$1126.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberAOT20
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)74 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3680 pF @ 25 V
MfrAlpha & Omega Semiconductor Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation417W (Tc)
RDS(on) Drain-to-Source On Resistance370mOhm @ 10A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-220-3
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Environmental Information
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PCN Assembly/Origin
Product Drawings
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)