AON7788N-Channel 30 V 20A (Ta), 40A (Tc) 3.1W (Ta), 36W (Tc) Surface Mount 8-DFN-EP (3x3)
1:$0.6360
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ABRmicro #.ABR2045-AON778-638098
ManufacturerAlpha & Omega Semiconductor
MPN #.AON7788
Estimated Lead Time-
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.6360
Ext. Price$ 0.6360
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Price Gradients
Qty.Unit PriceExt. Price
1$0.6360$0.6360
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
AON6448$1.1990
N-Channel 80 V 11A (Ta), 65A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-DFN (5x6)
Technical Specifications
SeriesSRFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberAON77
Continuous Drain Current (ID) @ 25°C20A (Ta), 40A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET FeatureSchottky Diode (Body)
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)29 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4100 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.1W (Ta), 36W (Tc)
RDS(on) Drain-to-Source On Resistance4.5mOhm @ 20A, 10V
Package Type (Mfr.)8-DFN-EP (3x3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case8-PowerVDFN
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Environmental Information
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)