AOD3N60N-Channel 600 V 2.5A (Tc) 56.8W (Tc) Surface Mount TO-252 (DPAK)
1:$0.6190
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-AOD3N6-656489
ManufacturerAlpha & Omega Semiconductor
MPN #.AOD3N60
Estimated Lead Time-
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Datasheet
AO(D,U)3N60(PDF)
AO(D,U)3N60(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.6190
Ext. Price$ 0.6190
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6190$0.6190
10$0.5340$5.3400
100$0.3690$36.9000
500$0.3090$154.5000
1000$0.2620$262.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 80 V 11A (Ta), 65A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-DFN (5x6)
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberAOD3
Continuous Drain Current (ID) @ 25°C2.5A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)370 pF @ 25 V
MfrAlpha & Omega Semiconductor Inc.
Mounting StyleSurface Mount
Operating Temperature-50°C ~ 150°C (TJ)
Maximum Power Dissipation56.8W (Tc)
RDS(on) Drain-to-Source On Resistance3.5Ohm @ 1.25A, 10V
Package Type (Mfr.)TO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
Other Related Documents
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)