AO4498EN-Channel 30 V 18A (Ta) 3.1W (Ta) Surface Mount 8-SOIC
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ABRmicro #.ABR278-AO4498-575973
ManufacturerAlpha & Omega Semiconductor
MPN #.AO4498E
Estimated Lead Time-
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberAO44
Continuous Drain Current (ID) @ 25°C18A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)50 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2760 pF @ 15 V
MfrAlpha & Omega Semiconductor Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.1W (Ta)
RDS(on) Drain-to-Source On Resistance5.8mOhm @ 18A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.3V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Environmental Information
Other Related Documents
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The AO4498E is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor, suitable for surface mounting with its 8-SOIC package design. It can handle a maximum voltage of 30 V and a continuous current of 18A with a power dissipation of 3.1W, both measured in air (Ta). The device features a gate threshold voltage of 2.3V at 250µA and a gate charge of 50 nC at 10 V. Its low on-resistance of 5.8 mOhm at 18A with a gate voltage of 10V makes it efficient for switching applications.
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