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VS-FC80NA20N-Channel 200 V 108A (Tc) 405W (Tc) Chassis Mount SOT-227

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ABRmicro #.ABR2045-VS-FC8-257861
MPN #.VS-FC80NA20
Estimated Lead Time-
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In Stock: 9
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Packaging
Tube
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFC80
Continuous Drain Current (ID) @ 25°C108A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)161 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10720 pF @ 50 V
MfrVishay General Semiconductor - Diodes Division
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation405W (Tc)
RDS(on) Drain-to-Source On Resistance14mOhm @ 80A, 10V
Package Type (Mfr.)SOT-227
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 250µA
Package / CaseSOT-227-4, miniBLOC
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)