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VS-FC420SA10N-Channel 100 V 435A (Tc) 652W (Tc) Chassis Mount SOT-227
1:$18.7390
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-VS-FC4-66922
ManufacturerVishay General Semiconductor
MPN #.VS-FC420SA10
Estimated Lead Time32 Weeks
SampleGet Free Sample
DatasheetVS-FC420SA10(PDF)
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In Stock: 1169
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 18.7390
Ext. Price$ 18.7390
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$18.7390$18.7390
10$16.6540$166.5400
100$14.5660$1456.6000
500$12.4290$6214.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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IGBT Module NPT Half Bridge Inverter 650 V 201 A 600 W Module Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberFC420
Continuous Drain Current (ID) @ 25°C435A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)375 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)17300 pF @ 25 V
MfrVishay General Semiconductor - Diodes Division
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation652W (Tc)
RDS(on) Drain-to-Source On Resistance2.15mOhm @ 200A, 10V
Package Type (Mfr.)SOT-227
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.8V @ 750µA
Package / CaseSOT-227-4, miniBLOC
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Datasheets
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)