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VS-FC270SA20N-Channel 200 V 287A (Tc) 937W (Tc) Chassis Mount SOT-227
1:$20.9340
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-VS-FC2-468018
ManufacturerVishay General Semiconductor
MPN #.VS-FC270SA20
Estimated Lead Time54 Weeks
SampleGet Free Sample
DatasheetVS-FC270SA20(PDF)
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In Stock: 98
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 20.9340
Ext. Price$ 20.9340
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$20.9340$20.9340
10$18.6050$186.0500
100$16.2720$1627.2000
500$13.8860$6943.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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IGBT Module NPT Half Bridge Inverter 650 V 201 A 600 W Module Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusActive
Base Product NumberFC270
Continuous Drain Current (ID) @ 25°C287A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)250 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)16500 pF @ 100 V
MfrVishay General Semiconductor - Diodes Division
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation937W (Tc)
RDS(on) Drain-to-Source On Resistance4.7mOhm @ 200A, 10V
Package Type (Mfr.)SOT-227
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.3V @ 1mA
Package / CaseSOT-227-4, miniBLOC
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Datasheets
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)