VS-FC220SA20N-Channel 200 V 220A (Tc) 789W (Tc) Chassis Mount SOT-227
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ABRmicro #.ABR2045-VS-FC2-398555
ManufacturerVishay General Semiconductor
MPN #.VS-FC220SA20
Estimated Lead Time-
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberFC220
Continuous Drain Current (ID) @ 25°C220A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)350 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)21000 pF @ 50 V
MfrVishay General Semiconductor - Diodes Division
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation789W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 150A, 10V
Package Type (Mfr.)SOT-227
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.1V @ 500µA
Package / CaseSOT-227-4, miniBLOC
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)