FB180SA10N-Channel 100 V 180A (Tc) 480W (Tc) Chassis Mount SOT-227
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ABRmicro #.ABR2045-FB180S-187941
ManufacturerVishay General Semiconductor
MPN #.FB180SA10
Estimated Lead Time-
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
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Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFB180
Continuous Drain Current (ID) @ 25°C180A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)380 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10700 pF @ 25 V
MfrVishay General Semiconductor - Diodes Division
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation480W (Tc)
RDS(on) Drain-to-Source On Resistance6.5mOhm @ 108A, 10V
Package Type (Mfr.)SOT-227
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseSOT-227-4, miniBLOC
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info@Abrmicro.com Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)