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2N3904PHBipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 625 mW Through Hole TO-92-3
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ABRmicro #.ABR2045-2N3904-218732
ManufacturerVishay General Semiconductor
MPN #.2N3904PH
Estimated Lead Time-
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In Stock: 3
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Shipping DateNovember 3, 2024
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IGBT Module NPT Half Bridge Inverter 650 V 201 A 600 W Module Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product Number2N3904
Collector Current (Iᴄ)@25°C200 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Frequency - Transition300MHz
MfrVishay General Semiconductor - Diodes Division
Mounting StyleThrough Hole
Operating Temperature-
Power - Max625 mW
Package Type (Mfr.)TO-92-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
Collector-Emitter Breakdown Voltage (Max.)40 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)