TSM950N10CW RPGN-Channel 100 V 6.5A (Tc) 9W (Tc) Surface Mount SOT-223
1:$0.5220
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ABRmicro #.ABR2045-TSM950-1016458
ManufacturerTaiwan Semiconductor
MPN #.TSM950N10CW RPG
Estimated Lead Time10 Weeks
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Datasheet
TSM950N10(PDF)
TSM950N10(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.5220
Ext. Price$ 0.5220
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5220$0.5220
10$0.4520$4.5160
100$0.3120$31.2380
500$0.2610$130.6880
1000$0.2220$222.0630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 60 V 11A (Tc) 25W (Tc) Surface Mount TO-252 (DPAK) Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTSM950
Continuous Drain Current (ID) @ 25°C6.5A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9.3 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1480 pF @ 50 V
MfrTaiwan Semiconductor Corporation
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation9W (Tc)
RDS(on) Drain-to-Source On Resistance95mOhm @ 5A, 10V
Package Type (Mfr.)SOT-223
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-261-4, TO-261AA
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TSM950N10CW RPG is an N-channel MOSFET manufactured by Taiwan Semiconductor, designed for efficient power management in electronic circuits. It operates with a maximum voltage of 100 V and can handle currents up to 6.5 A under specified conditions (Tc). This MOSFET can dissipate up to 9 W of power and is housed in a compact SOT-223 surface-mount package, making it suitable for integration into various compact assemblies. Its gate charge is measured at 9.3 nC at 10 V, and it has an input capacitance of 1480 pF at 50 V. Additionally, the component can withstand gate-source voltages of up to ±20 V, offering robustness in various electrical environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.