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KTC3198-GR A1GBipolar (BJT) Transistor NPN 50 V 150 mA 80MHz 500 mW Through Hole TO-92

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ABRmicro #.ABR2045-KTC319-917755
MPN #.KTC3198-GR A1G
Estimated Lead Time-
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Box (TB)
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Tape & Box (TB)
Lifecycle StatusObsolete
Base Product NumberKTC3198
Collector Current (Iᴄ)@25°C150 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 2mA, 6V
Frequency - Transition80MHz
MfrTaiwan Semiconductor Corporation
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max500 mW
Package Type (Mfr.)TO-92
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)