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TSM70N1R4CH C5GN-Channel 700 V 3.3A (Tc) 38W (Tc) Through Hole TO-251 (IPAK)

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ABRmicro #.ABR2045-TSM70N-920125
ManufacturerTaiwan Semiconductor
MPN #.TSM70N1R4CH C5G
Estimated Lead Time-
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberTSM70
Continuous Drain Current (ID) @ 25°C3.3A (Tc)
Drain-to-Source Voltage (VDS)700 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.7 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)370 pF @ 100 V
MfrTaiwan Semiconductor Corporation
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation38W (Tc)
RDS(on) Drain-to-Source On Resistance1.4Ohm @ 1.2A, 10V
Package Type (Mfr.)TO-251 (IPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
Taiwan Semi REACHTaiwan Semi RoHS
PCN Obsolescence/ EOL
OBS 22/Jan/2024
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)