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TSM6N50CP ROGN-Channel 500 V 5.6A (Ta) 90W (Tc) Surface Mount TO-252 (DPAK)
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ABRmicro #.ABR2045-TSM6N5-979258
ManufacturerTaiwan Semiconductor
MPN #.TSM6N50CP ROG
Estimated Lead Time-
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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N-Channel 60 V 11A (Tc) 25W (Tc) Surface Mount TO-252 (DPAK) Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C5.6A (Ta)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)900 pF @ 25 V
MfrTaiwan Semiconductor Corporation
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation90W (Tc)
RDS(on) Drain-to-Source On Resistance1.4Ohm @ 2.8A, 10V
Package Type (Mfr.)TO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TSM6N50CP ROG by Taiwan Semiconductor is an N-Channel MOSFET designed for high-voltage applications. It operates at a maximum voltage of 500 V and can handle a continuous current of 5.6A at a lower ambient temperature (Ta) and a power dissipation of up to 90W at a case temperature (Tc). This surface mount device is packaged in a TO-252 (DPAK) configuration, providing efficient thermal management and space-saving benefits for circuit designers. It features a gate-source voltage rating of ±30V and has a gate threshold voltage of 4V at a test current of 250µA. Additionally, the MOSFET includes a typical input capacitance of 900 pF with a test voltage of 25 V, contributing to its switching performance characteristics.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.