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TSM60NB600CH C5GN-Channel 600 V 7A (Tc) 63W (Tc) Through Hole TO-251 (IPAK)

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ABRmicro #.ABR2045-TSM60N-1011553
MPN #.TSM60NB600CH C5G
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberTSM60
Continuous Drain Current (ID) @ 25°C7A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)516 pF @ 100 V
MfrTaiwan Semiconductor Corporation
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation63W (Tc)
RDS(on) Drain-to-Source On Resistance600mOhm @ 2.1A, 10V
Package Type (Mfr.)TO-251 (IPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TSM60NB600CH C5G is an N-Channel MOSFET manufactured by Taiwan Semiconductor, designed for high-voltage applications with a maximum drain-source voltage of 600 volts. It supports a continuous current of up to 7 amperes when properly mounted and features a power dissipation capability of 63 watts, allowing it to handle significant power loads efficiently. The MOSFET offers a low on-state resistance of 600 milliohms at a gate-source voltage of 10 volts with a test current of 2.1 amperes. Encapsulated in a TO-251 (IPAK) through-hole package, it provides an accessible solution for integration into various electronic circuits.
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