The TSM60NB150CF C0G is a metal-oxide semiconductor field-effect transistor (MOSFET) developed by Taiwan Semiconductor. It is an N-Channel MOSFET designed for use in high-voltage applications, offering a voltage rating of 600V and a current rating of 24A at Tc. With a power dissipation capacity of 62.5W at Tc, this component ensures reliable performance in demanding environments. The device also features a threshold voltage of 4V at a drain current of 250µA and can withstand gate-source voltages up to ±30V. Packaged in a through-hole ITO-220S form factor, it provides a reliable solution for circuit designs requiring efficient power handling and thermal management.