TSM4806CS RLGN-Channel 20 V 28A (Ta) 2W (Ta) Surface Mount 8-SOP
1:$0.4530
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ABRmicro #.ABR2045-TSM480-966778
ManufacturerTaiwan Semiconductor
MPN #.TSM4806CS RLG
Estimated Lead Time16 Weeks
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Datasheet
TSM4806(PDF)
TSM4806(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.4530
Ext. Price$ 0.4530
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4530$0.4530
10$0.3860$3.8570
100$0.2680$26.7750
500$0.2090$104.6560
1000$0.1700$170.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 60 V 11A (Tc) 25W (Tc) Surface Mount TO-252 (DPAK) Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTSM4806
Continuous Drain Current (ID) @ 25°C28A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12.3 nC @ 4.5 V
Grade-
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)961 pF @ 15 V
MfrTaiwan Semiconductor Corporation
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2W (Ta)
Qualification-
RDS(on) Drain-to-Source On Resistance20mOhm @ 20A, 4.5V
Package Type (Mfr.)8-SOP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TSM4806CS RLG, manufactured by Taiwan Semiconductor, is an N-Channel MOSFET characterized by a 20 V drain-source voltage rating and a current capacity of 28A at room temperature with a power dissipation of 2W under the same conditions. It is designed for surface mount applications and comes in an 8-SOP package. The MOSFET features a low on-resistance of 20 milliohms when conducting 20A at a gate-source voltage of 4.5V, and it can tolerate gate-source voltages up to ±8V. Additionally, it has a gate charge of 12.3 nC when the gate-source voltage is 4.5V, contributing to its switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.