TSM2312CX RFGN-Channel 20 V 4.9A (Tc) 750mW (Ta) Surface Mount SOT-23
1:$0.3680
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ABRmicro #.ABR2045-TSM231-1036945
ManufacturerTaiwan Semiconductor
MPN #.TSM2312CX RFG
Estimated Lead Time-
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Datasheet
TSM2312(PDF)
TSM2312(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.3680
Ext. Price$ 0.3680
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3680$0.3680
10$0.3180$3.1770
100$0.2200$21.9940
500$0.1840$91.9060
1000$0.1720$172.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 60 V 11A (Tc) 25W (Tc) Surface Mount TO-252 (DPAK) Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberTSM2312
Continuous Drain Current (ID) @ 25°C4.9A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11.2 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)500 pF @ 10 V
MfrTaiwan Semiconductor Corporation
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation750mW (Ta)
RDS(on) Drain-to-Source On Resistance33mOhm @ 4.9A, 4.5V
Package Type (Mfr.)SOT-23
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The TSM2312CX RFG, manufactured by Taiwan Semiconductor, is an N-Channel MOSFET designed for surface mount applications in a compact SOT-23 package. It is capable of handling maximum voltages up to 20 volts and can support a continuous current of 4.9A when adequately heat-sunk (Tc), with a power dissipation of 750mW in free air (Ta). The device features a capacitance of 500 pF at 10 V, and it exhibits a threshold voltage of 1V at a 250µA gate current, facilitating efficient voltage-driven operation. With its Metal Oxide Semiconductor construction, the TSM2312CX RFG offers a reliable solution for switching applications requiring high-speed performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.