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TSM2311CX RFGP-Channel 20 V 4A (Ta) 900mW (Ta) Surface Mount SOT-23

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ABRmicro #.ABR2045-TSM231-942366
ManufacturerTaiwan Semiconductor
MPN #.TSM2311CX RFG
Estimated Lead Time-
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C4A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)6 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)640 pF @ 6 V
MfrTaiwan Semiconductor Corporation
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation900mW (Ta)
RDS(on) Drain-to-Source On Resistance55mOhm @ 4A, 4.5V
Package Type (Mfr.)SOT-23
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.4V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
Taiwan Semi REACHTaiwan Semi RoHS
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The TSM2311CX RFG, manufactured by Taiwan Semiconductor, is a P-Channel MOSFET designed for surface mount applications in a compact SOT-23 package. It operates with a maximum drain-source voltage of 20 V and has a continuous current rating of 4A at an ambient temperature. The power dissipation is rated at 900 mW under typical conditions. This MOSFET features a low on-state resistance of 55mOhm at 4A and 4.5V gate-source voltage, making it efficient for switching applications. It also has a gate threshold voltage of 1.4V at 250μA. The device exhibits an input capacitance of 640 pF at a gate-source voltage of 6 V, contributing to its switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.