TSM2306CX RFGN-Channel 30 V 3.5A (Ta) 1.25W (Ta) Surface Mount SOT-23
1:$0.4870
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ABRmicro #.ABR2045-TSM230-996393
ManufacturerTaiwan Semiconductor
MPN #.TSM2306CX RFG
Estimated Lead Time-
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Datasheet
TSM2306(PDF)
TSM2306(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.4870
Ext. Price$ 0.4870
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4870$0.4870
10$0.4200$4.1970
100$0.2910$29.1130
500$0.2430$121.6560
1000$0.2070$207.1880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 60 V 11A (Tc) 25W (Tc) Surface Mount TO-252 (DPAK) Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberTSM2306
Continuous Drain Current (ID) @ 25°C3.5A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)5.5 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)555 pF @ 15 V
MfrTaiwan Semiconductor Corporation
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.25W (Ta)
RDS(on) Drain-to-Source On Resistance57mOhm @ 3.5A, 10V
Package Type (Mfr.)SOT-23
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TSM2306CX RFG, manufactured by Taiwan Semiconductor, is an N-Channel MOSFET designed for surface mounting with a SOT-23 package. It can handle voltages up to 30 V and currents up to 3.5 A under typical operating conditions, with a power dissipation capability of 1.25 W. Key characteristics include a gate charge of 5.5 nC at 4.5 V, an on-state resistance of 57 mΩ at 3.5 A and 10 V, and an input capacitance of 555 pF at 15 V. This component is suitable for use in compact electronic circuits due to its small package and efficient electrical performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.