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TSM2303CX RFGP-Channel 30 V 1.3A (Ta) 700mW (Ta) Surface Mount SOT-23

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ABRmicro #.ABR2045-TSM230-978522
MPN #.TSM2303CX RFG
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberTSM2303
Continuous Drain Current (ID) @ 25°C1.3A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)3.2 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)565 pF @ 10 V
MfrTaiwan Semiconductor Corporation
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation700mW (Ta)
RDS(on) Drain-to-Source On Resistance180mOhm @ 1.3A, 10V
Package Type (Mfr.)SOT-23
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The TSM2303CX RFG is a P-Channel MOSFET manufactured by Taiwan Semiconductor, designed for surface mount applications packaged in a SOT-23 configuration. It operates with a maximum voltage of 30V and current of 1.3A, with a power dissipation capacity of 700mW measured under ambient conditions. The part features a low on-state resistance of 180 milliOhms at a drain current of 1.3A when the gate-source voltage is 10V. It has a gate-source voltage range of up to ±20V, with operational gate threshold levels of 4.5V and 10V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.