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TSM1NB60SCT B0GN-Channel 600 V 500mA (Tc) 2.5W (Tc) Through Hole TO-92

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ABRmicro #.ABR2045-TSM1NB-925650
ManufacturerTaiwan Semiconductor
MPN #.TSM1NB60SCT B0G
Estimated Lead Time-
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DatasheetDatasheetTSM1NB60SCT(PDF)
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In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
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Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C500mA (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.1 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)138 pF @ 25 V
MfrTaiwan Semiconductor Corporation
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Tc)
RDS(on) Drain-to-Source On Resistance10Ohm @ 250mA, 10V
Package Type (Mfr.)TO-92
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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Datasheets
TSM1NB60SCT
Environmental Information
Taiwan Semi REACHTaiwan Semi RoHS
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TSM1NB60SCT B0G is an N-Channel MOSFET manufactured by Taiwan Semiconductor, packaged in a TO-92 through-hole format. It features a drain-source voltage rating of 600 volts and can handle a continuous current of 500 mA when properly heat sunk. The device has a power dissipation capacity of 2.5 watts under specified temperature conditions. With a gate charge of 6.1 nC at 10 volts and an input capacitance of 138 pF at 25 volts, this MOSFET is designed for efficient switching performance. Its compact form factor and electrical characteristics make it suitable for various electronic circuits requiring high voltage handling in a small footprint.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.