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TSM1NB60SCT A3N-Channel 600 V 500mA (Tc) 2.5W (Tc) Through Hole TO-92

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ABRmicro #.ABR2045-TSM1NB-992490
ManufacturerTaiwan Semiconductor
MPN #.TSM1NB60SCT A3
Estimated Lead Time-
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DatasheetDatasheetTSM1NB60SCT(PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Box (TB)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Box (TB)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C500mA (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.1 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)138 pF @ 25 V
MfrTaiwan Semiconductor Corporation
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Tc)
RDS(on) Drain-to-Source On Resistance10Ohm @ 250mA, 10V
Package Type (Mfr.)TO-92
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
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Datasheets
TSM1NB60SCT
Environmental Information
Taiwan Semi REACHTaiwan Semi RoHS
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TSM1NB60SCT A3, manufactured by Taiwan Semiconductor, is an N-channel MOSFET characterized by a maximum voltage rating of 600 V and a continuous current capacity of 500 mA under specified conditions. Housed in a TO-92 through-hole package, this transistor supports a power dissipation of 2.5 W at the case temperature. It features a gate-source voltage tolerance of ±30 V and exhibits an on-resistance of 10 Ohms at a drain current of 250 mA with a gate voltage of 10 V. Additionally, the device has an input capacitance of 138 pF when subjected to a voltage of 25 V. This part serves as a compact and effective solution for high-voltage switching applications under the described specifications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.