TSM1N45CT B0GN-Channel 450 V 500mA (Tc) 2W (Tc) Through Hole TO-92
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ABRmicro #.ABR2045-TSM1N4-1008073
ManufacturerTaiwan Semiconductor
MPN #.TSM1N45CT B0G
Estimated Lead Time-
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Datasheet
TSM1N45(PDF)
TSM1N45(PDF)
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Shipping DateNovember 16, 2024
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N-Channel 60 V 11A (Tc) 25W (Tc) Surface Mount TO-252 (DPAK) Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C500mA (Tc)
Drain-to-Source Voltage (VDS)450 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)235 pF @ 25 V
MfrTaiwan Semiconductor Corporation
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2W (Tc)
RDS(on) Drain-to-Source On Resistance4.25Ohm @ 250mA, 10V
Package Type (Mfr.)TO-92
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.25V @ 250µA
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TSM1N45CT B0G is an N-channel MOSFET manufactured by Taiwan Semiconductor. It is designed for high voltage applications, featuring a maximum drain-source voltage of 450 V and a continuous drain current of 500 mA at case temperature (Tc). It can dissipate up to 2 watts under thermal conditions. This MOSFET is housed in a compact TO-92 through-hole package, making it suitable for space-constrained designs. Key electrical characteristics include a gate-source voltage tolerance of ±30 V, an on-resistance of 4.25 Ohms at a drain current of 250 mA and a gate-source voltage of 10 V, and a typical input capacitance of 235 pF at a voltage of 25 V.
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