TSM170N06CH C5GN-Channel 60 V 38A (Tc) 46W (Tc) Through Hole TO-251 (IPAK)
1:$0.7860
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ABRmicro #.ABR2045-TSM170-949114
ManufacturerTaiwan Semiconductor
MPN #.TSM170N06CH C5G
Estimated Lead Time16 Weeks
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Datasheet
TSM170N06CH(PDF)
TSM170N06CH(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7860
Ext. Price$ 0.7860
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7860$0.7860
75$0.6510$48.8480
150$0.4730$70.9220
525$0.3950$207.5060
1050$0.3370$353.6530
2025$0.3000$606.7410
5025$0.2840$1425.5300
10050$0.2640$2648.1750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 60 V 11A (Tc) 25W (Tc) Surface Mount TO-252 (DPAK) Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTSM170
Continuous Drain Current (ID) @ 25°C38A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)28.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)900 pF @ 25 V
MfrTaiwan Semiconductor Corporation
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation46W (Tc)
RDS(on) Drain-to-Source On Resistance17mOhm @ 20A, 10V
Package Type (Mfr.)TO-251 (IPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TSM170N06CH C5G is an N-Channel MOSFET manufactured by Taiwan Semiconductor, designed for efficient power handling. This component can handle a maximum drain-source voltage of 60V and a continuous drain current of 38A when properly cooled (with case temperature considerations). It comes in a through-hole TO-251 (IPAK) package, making it suitable for applications that require mounting stability and efficient heat dissipation. The MOSFET also features a gate-source voltage rating of ±20V and a gate threshold voltage of 2.5V at a drain current of 250µA, offering reliable switching capabilities for various electronic applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.