TSM150NB04LCR RLGN-Channel 40 V 10A (Ta), 41A (Tc) 3.1W (Ta), 56W (Tc) Surface Mount 8-PDFN (5.2x5.75)
1:$0.6240
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ABRmicro #.ABR2045-TSM150-1035092
ManufacturerTaiwan Semiconductor
MPN #.TSM150NB04LCR RLG
Estimated Lead Time16 Weeks
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Datasheet
TSM150NB04LCR(PDF)
TSM150NB04LCR(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.6240
Ext. Price$ 0.6240
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6240$0.6240
10$0.5390$5.3870
100$0.3730$37.2940
500$0.3110$155.6560
1000$0.2650$264.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 60 V 11A (Tc) 25W (Tc) Surface Mount TO-252 (DPAK) Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTSM150
Continuous Drain Current (ID) @ 25°C10A (Ta), 41A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)966 pF @ 20 V
MfrTaiwan Semiconductor Corporation
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.1W (Ta), 56W (Tc)
RDS(on) Drain-to-Source On Resistance15mOhm @ 10A, 10V
Package Type (Mfr.)8-PDFN (5.2x5.75)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-PowerLDFN
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TSM150NB04LCR RLG by Taiwan Semiconductor is an N-Channel MOSFET designed for efficient power management. It supports a maximum voltage of 40V and handles currents up to 10A in ambient conditions (Ta) and 41A when properly heat-sinked (Tc). The device dissipates up to 3.1W without additional cooling, and up to 56W with adequate heatsinking. It has a low on-resistance of 15mOhms at 10A, 10V, making it suitable for minimizing power loss in high-current applications. The MOSFET is housed in a compact 8-PDFN surface-mount package, with dimensions of 5.2mm by 5.75mm, optimized for space-constrained environments. Its threshold voltage is manageable at 2.5V with a gate-source voltage tolerance of ±20V, ensuring reliable switching performance.
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