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TSM120N06LCR RLGN-Channel 60 V 54A (Tc) 69W (Tc) Surface Mount 8-PDFN (5x6)

1:$0.5100

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ABRmicro #.ABR2045-TSM120-1020366
MPN #.TSM120N06LCR RLG
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In Stock: 133
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.5100
Ext. Price$ 0.5100
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
5000$0.5100$2550.0000
12500$0.4870$6082.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberTSM120
Continuous Drain Current (ID) @ 25°C54A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)36.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2116 pF @ 30 V
MfrTaiwan Semiconductor Corporation
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation69W (Tc)
RDS(on) Drain-to-Source On Resistance12mOhm @ 10A, 10V
Package Type (Mfr.)8-PDFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TSM120N06LCR RLG is an N-channel MOSFET manufactured by Taiwan Semiconductor. It is designed for surface mount applications and comes in an 8-PDFN (5x6) package. This MOSFET can handle a maximum voltage of 60 V and a continuous current of up to 54A at a case temperature (Tc), with a power dissipation of 69W. It features a gate-source voltage rating of ±20V, a total gate charge of 36.5 nC when driven with 10 V, and a capacitance of 2116 pF at 30 V. These specifications indicate the component’s capacity to manage significant power loads and switching frequencies in compact electronic configurations.
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