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TSM089N08LCR RLGN-Channel 80 V 67A (Tc) 83W (Tc) Surface Mount 8-PDFN (5x6)

1:$1.5980

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ABRmicro #.ABR2045-TSM089-927071
ManufacturerTaiwan Semiconductor
MPN #.TSM089N08LCR RLG
Estimated Lead Time24 Weeks
SampleGet Free Sample
DatasheetDatasheetTSM089N08LCR(PDF)
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In Stock: 7000
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.5980
Ext. Price$ 1.5980
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.5980$1.5980
10$1.3300$13.3030
100$1.0590$105.9310
500$0.8960$447.8440
1000$0.7610$760.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTSM089
Continuous Drain Current (ID) @ 25°C67A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)90 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6119 pF @ 40 V
MfrTaiwan Semiconductor Corporation
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation83W (Tc)
RDS(on) Drain-to-Source On Resistance8.9mOhm @ 12A, 10V
Package Type (Mfr.)8-PDFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
TSM089N08LCR
Environmental Information
Taiwan Semi REACHTaiwan Semi RoHS
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TSM089N08LCR RLG is a surface-mount N-channel MOSFET manufactured by Taiwan Semiconductor. It operates at a maximum voltage of 80 V and can handle a continuous current of 67A with a power dissipation of 83W under specified conditions (Tc). Housed in an 8-PDFN package measuring 5x6 mm, this component features low on-resistance of 8.9 mOhm at 12A and 10V, and it is designed for efficient switching with threshold voltages of 4.5V and 10V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.