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TSM060N03CP ROGN-Channel 30 V 70A (Tc) 54W (Tc) Surface Mount TO-252 (DPAK)
1:$0.7010
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ABRmicro #.ABR2045-TSM060-925736
ManufacturerTaiwan Semiconductor
MPN #.TSM060N03CP ROG
Estimated Lead Time24 Weeks
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DatasheetTSM060N03CP(PDF)
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In Stock: 5618
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.7010
Ext. Price$ 0.7010
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7010$0.7010
10$0.6070$6.0670
100$0.4200$41.9690
500$0.3520$175.8440
1000$0.3000$299.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 60 V 11A (Tc) 25W (Tc) Surface Mount TO-252 (DPAK) Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTSM060
Continuous Drain Current (ID) @ 25°C70A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11.1 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1160 pF @ 25 V
MfrTaiwan Semiconductor Corporation
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation54W (Tc)
RDS(on) Drain-to-Source On Resistance6mOhm @ 20A, 10V
Package Type (Mfr.)TO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TSM060N03CP ROG is an N-channel MOSFET manufactured by Taiwan Semiconductor. It is designed for surface mount applications and comes in a TO-252 (DPAK) package. This MOSFET can handle a drain-source voltage of up to 30 volts and a continuous current of 70 amperes at a case temperature (Tc). It offers a power dissipation of 54 watts under similar conditions. The device features an input capacitance of 1160 pF at 25 volts and has gate charge characteristics of 11.1 nC at 4.5 volts. These specifications make it suitable for efficient switching operations in various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.