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VN2222LLRLRAGN-Channel 60 V 150mA (Ta) 400mW (Ta) Through Hole TO-92 (TO-226)
N/A
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ABRmicro #.ABR2045-VN2222-1036573
ManufacturerOnsemi
MPN #.VN2222LLRLRAG
Estimated Lead Time-
SampleGet Free Sample
DatasheetVN2222LL(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberVN2222
Continuous Drain Current (ID) @ 25°C150mA (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)60 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation400mW (Ta)
RDS(on) Drain-to-Source On Resistance7.5Ohm @ 500mA, 10V
Package Type (Mfr.)TO-92 (TO-226)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 1mA
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The VN2222LLRLRAG, manufactured by Onsemi, is an N-Channel MOSFET designed for efficient switching applications. This component is capable of handling a maximum drain-source voltage of 60 V and a continuous current of 150 mA at ambient temperature conditions, with a power dissipation of 400mW. It is housed in a TO-92 (TO-226) package, suitable for through-hole mounting. The input capacitance is 60 pF at 25 V, and it features a gate-source voltage rating of ±20V. Additionally, the MOSFET offers a drain-source on-state resistance of 7.5 Ohms when operating at 500 mA and 10 V.
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