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SFU9220TU_F080P-Channel 200 V 3.1A (Tc) 2.5W (Ta), 30W (Tc) Through Hole IPAK
N/A
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ABRmicro #.ABR2045-SFU922-995916
ManufacturerOnsemi
MPN #.SFU9220TU_F080
Estimated Lead Time-
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DatasheetFairchild Product Catalog(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSFU922
Continuous Drain Current (ID) @ 25°C3.1A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)19 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)540 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-
Maximum Power Dissipation2.5W (Ta), 30W (Tc)
RDS(on) Drain-to-Source On Resistance1.5Ohm @ 1.6A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SFU9220TU_F080 by Onsemi is a P-Channel MOSFET distinguished by its capability to handle up to 200 volts and a continuous current of 3.1 amperes when mounted on a heatsink, or 2.5 watts in free air, escalating to a power rating of 30 watts with a proper thermal setup. Packaged in the IPAK format, this component is designed for through-hole mounting, facilitating easy integration into various electronic assemblies. It features a gate charge of 19 nanoCoulombs at 10 volts and a threshold voltage of 4 volts at 250 microAmperes. Additionally, it exhibits an on-resistance of 1.5 ohms at a drain current of 1.6 amperes and a gate-source voltage of 10 volts, which is critical for efficient switching performance.
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