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SFT1342-TL-EP-Channel 60 V 12A (Ta) 1W (Ta), 15W (Tc) Surface Mount DPAK/TP-FA

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ABRmicro #.ABR2045-SFT134-928517
ManufacturerOnsemi
MPN #.SFT1342-TL-E
Estimated Lead Time-
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DatasheetDatasheetSFT1342(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSFT134
Continuous Drain Current (ID) @ 25°C12A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)26 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1150 pF @ 20 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1W (Ta), 15W (Tc)
RDS(on) Drain-to-Source On Resistance62mOhm @ 6A, 10V
Package Type (Mfr.)DPAK/TP-FA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.6V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SFT1342
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
EOL 18/Oct/2016
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SFT1342-TL-E is a P-Channel MOSFET manufactured by Onsemi, designed for efficient power management in various electronic systems. This component can handle a continuous drain current of 12A at a maximum voltage of 60V in ambient temperature conditions, with a power dissipation capacity of 1W in free air and up to 15W when mounted on a suitable heatsink (Tc). It is housed in a surface-mount DPAK/TP-FA package, providing ease of integration into circuits. The MOSFET features a gate charge of 26 nC at 10V, a threshold voltage of 2.6V at 1mA, and a low on-resistance of 62mOhm when conducting 6A at 10V, making it suitable for applications requiring efficient switching performance and compact mounting solutions.
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