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SFM9110TFP-Channel 100 V 1A (Ta) 2.52W (Ta) Surface Mount SOT-223-4

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ABRmicro #.ABR2045-SFM911-935493
ManufacturerOnsemi
MPN #.SFM9110TF
Estimated Lead Time-
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DatasheetDatasheetSFM9110(PDF)
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSFM911
Continuous Drain Current (ID) @ 25°C1A (Ta)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)10 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)335 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.52W (Ta)
RDS(on) Drain-to-Source On Resistance1.2Ohm @ 500mA, 10V
Package Type (Mfr.)SOT-223-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-261-4, TO-261AA
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Datasheets
Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SFM9110TF is a surface mount P-Channel MOSFET manufactured by Onsemi, designed for use in electronic circuits requiring efficient control of power. This component, housed in a SOT-223-4 package, offers a maximum voltage rating of 100 V and can conduct up to 1 A of current at ambient temperature conditions. With a power dissipation capability of 2.52W at ambient temperature, the SFM9110TF features a drain-source on-resistance of 1.2 ohms when driven with a gate-source voltage of 10V and a drain current of 500mA. This MOSFET is suitable for applications that demand compact design and reliable MOSFET performance.
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