Image is for reference only, the actual product serves as the standard.
SFM9110TFP-Channel 100 V 1A (Ta) 2.52W (Ta) Surface Mount SOT-223-4
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SFM911-935493
ManufacturerOnsemi
MPN #.SFM9110TF
Estimated Lead Time-
SampleGet Free Sample
DatasheetSFM9110(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSFM911
Continuous Drain Current (ID) @ 25°C1A (Ta)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)10 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)335 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.52W (Ta)
RDS(on) Drain-to-Source On Resistance1.2Ohm @ 500mA, 10V
Package Type (Mfr.)SOT-223-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-261-4, TO-261AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SFM9110TF is a surface mount P-Channel MOSFET manufactured by Onsemi, designed for use in electronic circuits requiring efficient control of power. This component, housed in a SOT-223-4 package, offers a maximum voltage rating of 100 V and can conduct up to 1 A of current at ambient temperature conditions. With a power dissipation capability of 2.52W at ambient temperature, the SFM9110TF features a drain-source on-resistance of 1.2 ohms when driven with a gate-source voltage of 10V and a drain current of 500mA. This MOSFET is suitable for applications that demand compact design and reliable MOSFET performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.