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SCH1433-TL-WN-Channel 20 V 3.5A (Ta) 800mW (Ta) Surface Mount SOT-563/SCH6
N/A
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ABRmicro #.ABR2045-SCH143-1007927
ManufacturerOnsemi
MPN #.SCH1433-TL-W
Estimated Lead Time-
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DatasheetSCH1433(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSCH143
Continuous Drain Current (ID) @ 25°C3.5A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)2.8 nC @ 4.5 V
Grade-
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)260 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation800mW (Ta)
Qualification-
RDS(on) Drain-to-Source On Resistance64mOhm @ 1.5A, 4.5V
Package Type (Mfr.)SOT-563/SCH6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.3V @ 1mA
Package / CaseSOT-563, SOT-666
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Environmental Information
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The SCH1433-TL-W is an N-Channel MOSFET manufactured by Onsemi, designed for surface mounting with a SOT-563/SCH6 package. It operates at a voltage of 20 V and can handle a current of 3.5A, with a maximum power dissipation of 800mW. The part features a low on-resistance of 64mOhm at 1.5A and 4.5V, ensuring efficient current switching. It supports gate-source voltages of 1.8V and 4.5V, and provides a gate threshold voltage of 1.3V at 1mA, making it suitable for compact electronic designs requiring efficient switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.