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SCH1337-TL-WP-Channel 30 V 2A (Ta) 800mW (Ta) Surface Mount SOT-563/SCH6
N/A
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ABRmicro #.ABR2045-SCH133-1004092
ManufacturerOnsemi
MPN #.SCH1337-TL-W
Estimated Lead Time-
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DatasheetSCH1337(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSCH133
Continuous Drain Current (ID) @ 25°C2A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)3.9 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)172 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation800mW (Ta)
RDS(on) Drain-to-Source On Resistance150mOhm @ 1A, 10V
Package Type (Mfr.)SOT-563/SCH6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.6V @ 1mA
Package / CaseSOT-563, SOT-666
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The SCH1337-TL-W is a P-Channel MOSFET manufactured by Onsemi, encapsulated in a compact SOT-563/SCH6 surface-mount package. It is designed to support a maximum voltage of 30 V and a current rating of 2 A under standard Ta conditions, with a power dissipation capacity of 800 mW. The device exhibits a capacitance of 172 pF at 10 V, featuring a gate threshold voltage of 2.6 V at 1 mA, and a total gate charge of 3.9 nC at 10 V. This combination of specifications ensures efficient performance in various electronic applications.
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