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SCH1301-TL-EP-Channel 12 V 2.4A (Ta) 800mW (Ta) Surface Mount 6-SCH
1:$0.0770
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ABRmicro #.ABR2045-SCH130-953046
ManufacturerOnsemi
MPN #.SCH1301-TL-E
Estimated Lead Time-
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In Stock: 80500
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.0770
Ext. Price$ 0.0770
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Price Gradients
Qty.Unit PriceExt. Price
2959$0.0770$226.3640
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C2.4A (Ta)
Drain-to-Source Voltage (VDS)12 V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)6.5 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)450 pF @ 6 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation800mW (Ta)
RDS(on) Drain-to-Source On Resistance120mOhm @ 1.3A, 4.5V
Package Type (Mfr.)6-SCH
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / Case6-SMD, Flat Leads
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Environmental & Export Classifications
RoHS ComplianceNot covered by or subject to the RoHS directive
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The SCH1301-TL-E is a surface-mount P-Channel MOSFET manufactured by Onsemi. It is designed to handle a drain-source voltage of 12 V with a continuous current rating of 2.4 A at a specified ambient temperature (Ta). The device features a power dissipation capacity of 800 mW under standard conditions. It offers a gate charge of 6.5 nanocoulombs at 4.5 V and exhibits an on-resistance of 120 milliohms while conducting 1.3 A of current at the same gate-source voltage. Packaged in a compact 6-SCH configuration, this MOSFET is suitable for applications requiring efficient switching performance.
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