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RFP2N10LN-Channel 100 V 2A (Tc) 25W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-RFP2N1-983198
ManufacturerOnsemi
MPN #.RFP2N10L
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetRFP2N08L, RFP2N10L(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberRFP2N
Continuous Drain Current (ID) @ 25°C2A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)200 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation25W (Tc)
RDS(on) Drain-to-Source On Resistance1.05Ohm @ 2A, 5V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
RFP2N08L, RFP2N10L
Environmental Information
onsemi REACHonsemi RoHS
Product Drawings
TO220B03 Pkg Drawing
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The RFP2N10L is an N-channel MOSFET manufactured by Onsemi, designed for efficient power management in electronic circuits. It has a maximum drain-source voltage of 100 V and can handle a continuous current of 2A at its thermal limits. The device is capable of dissipating up to 25W of power when mounted on a suitable heatsink. Encased in a TO-220-3 package, it supports through-hole mounting for easy integration into various designs. The MOSFET features an input capacitance of 200 pF at 25 V and requires a gate-source voltage of ±10V, with a gate threshold voltage of 2V at a drain current of 250µA. These characteristics make it a practical choice for switching and amplification tasks in moderate power applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.