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RFP22N10N-Channel 100 V 22A (Tc) 100W (Tc) Through Hole TO-220-3
N/A
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ABRmicro #.ABR2045-RFP22N-920860
ManufacturerOnsemi
MPN #.RFP22N10
Estimated Lead Time-
SampleGet Free Sample
DatasheetRFP22N10, RF1S22N10SM(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberRFP22
Continuous Drain Current (ID) @ 25°C22A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)150 nC @ 20 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation100W (Tc)
RDS(on) Drain-to-Source On Resistance80mOhm @ 22A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Product Drawings
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The RFP22N10 is an N-Channel MOSFET manufactured by Onsemi, designed for high-efficiency power switching applications. It features a maximum drain-source voltage of 100 volts and can handle continuous currents up to 22 amps at a case temperature (Tc) of 100 watts, making it suitable for high-power usage. This MOSFET is encapsulated in a TO-220-3 package, which is a standard through-hole configuration for ease of mounting and heat dissipation. The device exhibits a gate threshold voltage of 4 volts with a gate leakage current of 250 microamps, while offering a gate-source voltage tolerance of ±20 volts, which ensures robust operation under varying electrical conditions.
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