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RFG70N06N-Channel 60 V 70A (Tc) 150W (Tc) Through Hole TO-247-3
N/A
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ABRmicro #.ABR2045-RFG70N-987828
ManufacturerOnsemi
MPN #.RFG70N06
Estimated Lead Time-
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberRFG70
Continuous Drain Current (ID) @ 25°C70A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)156 nC @ 20 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2250 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation150W (Tc)
RDS(on) Drain-to-Source On Resistance14mOhm @ 70A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
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Environmental Information
PCN Design/Specification
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The RFG70N06 is an N-Channel MOSFET manufactured by Onsemi, designed for efficient power handling. It supports a maximum voltage of 60V and can carry a current of up to 70A when properly cooled, with a power dissipation nominal of 150W. This component is encapsulated in a TO-247-3 package, which is suitable for through-hole mounting. Its gate threshold voltage is specified at 10V, with a gate charge of 156 nC measured at 20V, and a low gate drive voltage of 4V at a test current of 250µA.
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