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RFD4N06LSM9AN-Channel 60 V 4A (Tc) 30W (Tc) Surface Mount TO-252AA
N/A
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ABRmicro #.ABR2045-RFD4N0-1000460
ManufacturerOnsemi
MPN #.RFD4N06LSM9A
Estimated Lead Time-
SampleGet Free Sample
DatasheetRFD4N06L, RFD4N06LSM(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberRFD4N
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8 nC @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance600mOhm @ 1A, 5V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part RFD4N06LSM9A, manufactured by Onsemi, is an N-Channel MOSFET designed for surface mounting and encased in a TO-252AA package. It is capable of handling a maximum drain-source voltage of 60 V and can conduct a continuous current of up to 4 A when appropriately cooled. The power dissipation is rated at 30W under specific thermal conditions. It has an on-resistance of 600 milliohms at 1A with a gate-source voltage of 5V. The device operates with a gate threshold voltage of 5V and supports a gate-source voltage (Vgs) range of up to ±10V.
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