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NVTFWS002N04CLTAGN-Channel 40 V 28A (Ta), 142A (Tc) 3.2W (Ta), 85W (Tc) Surface Mount 8-WDFN (3.3x3.3)

1:$1.6320

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ABRmicro #.ABR2045-NVTFWS-928377
ManufacturerOnsemi
MPN #.NVTFWS002N04CLTAG
Estimated Lead Time16 Weeks
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In Stock: 1050
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.6320
Ext. Price$ 1.6320
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.6320$1.6320
10$1.3570$13.5680
100$1.0810$108.0560
500$0.9140$456.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNVTFWS002
Continuous Drain Current (ID) @ 25°C28A (Ta), 142A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)49 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2940 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.2W (Ta), 85W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance2.2mOhm @ 50A, 10V
Package Type (Mfr.)8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 90µA
Package / Case8-PowerWDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Environmental Information
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVTFWS002N04CLTAG is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications. This component offers a voltage rating of 40 V and a current rating of up to 28A at ambient temperature (Ta) and 142A at case temperature (Tc). It features low on-resistance, measured at 2.2 milliohms when conducting 50A with a gate-source voltage of 10V, alongside a threshold voltage of 2V at 90µA. The MOSFET is encased in an 8-WDFN package measuring 3.3mm by 3.3mm, providing power dissipation capabilities of 3.2W in free air (Ta) and 85W when mounted on a heat sink (Tc). This robust combination of specifications ensures efficient performance in various switching applications.
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