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NVTFS6H850NTAGN-Channel 80 V 11A (Ta), 68A (Tc) 3.2W (Ta), 107W (Tc) Surface Mount 8-WDFN (3.3x3.3)

1:$0.8470

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ABRmicro #.ABR2045-NVTFS6-998463
ManufacturerOnsemi
MPN #.NVTFS6H850NTAG
Estimated Lead Time19 Weeks
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DatasheetDatasheetNVTFS6H850N(PDF)
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In Stock: 2055
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.8470
Ext. Price$ 0.8470
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.8470$0.8470
10$0.6950$6.9490
100$0.5400$53.9750
500$0.4580$228.9690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNVTFS6
Continuous Drain Current (ID) @ 25°C11A (Ta), 68A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)19 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1140 pF @ 40 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.2W (Ta), 107W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance9.5mOhm @ 10A, 10V
Package Type (Mfr.)8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 70µA
Package / Case8-PowerWDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NVTFS6H850N
Environmental Information
Material Declaration NVTFS6H850NTAGonsemi REACHonsemi RoHS
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVTFS6H850NTAG is an N-Channel MOSFET manufactured by Onsemi, featuring a maximum voltage rating of 80V. This component can handle a continuous current of 11A at ambient temperature and up to 68A when mounted on a suitable thermal substrate (as specified by the case). It is designed for surface mounting and comes in an 8-WDFN package measuring 3.3x3.3mm. The device can dissipate up to 3.2W in free air and 107W when properly heatsinked. It exhibits a total gate charge of 1140 pF at 40V, operates efficiently with a gate-source voltage of 10V, and presents a low on-state resistance of 9.5mOhm when conducting a current of 10A at the same gate voltage.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.