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NVTFS4C13NWFTWGN-Channel 30 V 14A (Ta) 3W (Ta), 26W (Tc) Surface Mount 8-WDFN (3.3x3.3)

1:$1.0760

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NVTFS4-1038651
ManufacturerOnsemi
MPN #.NVTFS4C13NWFTWG
Estimated Lead Time8 Weeks
SampleGet Free Sample
DatasheetDatasheetNVTFS4C13N(PDF)
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In Stock: 3500
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.0760
Ext. Price$ 1.0760
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.0760$1.0760
10$0.8830$8.8290
100$0.6870$68.7440
500$0.5820$291.1250
1000$0.4740$473.8750
2000$0.4460$892.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNVTFS4
Continuous Drain Current (ID) @ 25°C14A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15.2 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)770 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3W (Ta), 26W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance9.4mOhm @ 30A, 10V
Package Type (Mfr.)8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 250µA
Package / Case8-PowerWDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NVTFS4C13N
Environmental Information
Material Declaration NVTFS4C13NWFTWGonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Dev Wafer Fab Chg 8/Jan/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVTFS4C13NWFTWG is an N-channel MOSFET manufactured by Onsemi, designed for efficient power management in a compact surface-mount package. It operates with a voltage rating of 30V and can handle continuous currents up to 14A in free air and 26W when properly mounted. This device features a gate charge of 15.2 nC at 10V and displays a low on-state resistance of 9.4 mOhms at 30A and 10V, indicating efficient conductivity and reduced energy loss. Encased in an 8-WDFN package measuring 3.3x3.3 mm, this MOSFET is suitable for space-constrained circuit boards.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.