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NVTFS4C08NWFTAGN-Channel 30 V 17A (Ta) 3.1W (Ta), 31W (Tc) Surface Mount 8-WDFN (3.3x3.3)

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ABRmicro #.ABR2045-NVTFS4-962771
ManufacturerOnsemi
MPN #.NVTFS4C08NWFTAG
Estimated Lead Time-
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DatasheetDatasheetNVTFS4C08N(PDF)
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberNVTFS4
Continuous Drain Current (ID) @ 25°C17A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18.2 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1113 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.1W (Ta), 31W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance5.9mOhm @ 30A, 10V
Package Type (Mfr.)8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / Case8-PowerWDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NVTFS4C08N
Environmental Information
Material Declaration NVTFS4C08NWFTAGonsemi REACHonsemi RoHS
PCN Assembly/Origin
Cancellation 02/Dec/2019
PCN Obsolescence/ EOL
OBS NOTICE 02/Oct/2023
PCN Packaging
Mult Changes 09/Jul/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVTFS4C08NWFTAG is an N-Channel MOSFET manufactured by Onsemi, designed for efficient power management applications. It operates at a maximum of 30 volts and can handle a current of 17 amperes in a free-air (Ta) environment, with a power dissipation rating of 3.1 watts (Ta) and 31 watts when mounted on a temperature-controlled circuit board (Tc). Encased in a compact 8-WDFN package measuring 3.3 x 3.3 mm, this surface-mount MOSFET features a gate threshold voltage of 2.2V at a gate current of 250µA and supports a gate-source voltage range of ±20V. It is characterized by turn-on properties at both 4.5V and 10V gate drive, making it suitable for electronic devices requiring space-efficient, high-performance components.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.