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NVTFS4823NTAGN-Channel 30 V 13A (Ta) 3.1W (Ta), 21W (Tc) Surface Mount 8-WDFN (3.3x3.3)

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ABRmicro #.ABR2045-NVTFS4-1012308
ManufacturerOnsemi
MPN #.NVTFS4823NTAG
Estimated Lead Time-
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DatasheetDatasheetNVTFS4823N(PDF)
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNVTFS4823
Continuous Drain Current (ID) @ 25°C13A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6 nC @ 4.5 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)750 pF @ 12 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.1W (Ta), 21W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance10.5mOhm @ 15A, 10V
Package Type (Mfr.)8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-PowerWDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NVTFS4823N
Environmental Information
Material Declaration NVTFS4823NTAGonsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Mult Dev EOL 06/Oct/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NVTFS4823NTAG is a surface-mount N-Channel MOSFET manufactured by Onsemi, designed for efficient power management in electronic circuits. It operates with a maximum voltage of 30 V and can handle continuous currents up to 13A when mounted on a referenced ambient surface (Ta). The device can dissipate up to 3.1W when mounted on a suitable surface, and 21W when the case is directly connected to a heat sink (Tc). The MOSFET is housed in an 8-WDFN package measuring 3.3mm by 3.3mm, making it suitable for compact applications. It has turn-on thresholds at both 4.5V and 10V, making it versatile in various circuit designs that require different gate-source voltages.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.