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NVR5124PLT1GP-Channel 60 V 1.1A (Ta) 470mW (Ta) Surface Mount SOT-23-3 (TO-236)
1:$0.3840
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ABRmicro #.ABR2045-NVR512-996398
ManufacturerOnsemi
MPN #.NVR5124PLT1G
Estimated Lead Time20 Weeks
SampleGet Free Sample
DatasheetNVR5124PL(PDF)
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In Stock: 4816
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3840
Ext. Price$ 0.3840
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3840$0.3840
10$0.3300$3.3040
100$0.2300$22.9500
500$0.1800$89.7810
1000$0.1460$145.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNVR5124
Continuous Drain Current (ID) @ 25°C1.1A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)4.3 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)240 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation470mW (Ta)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance230mOhm @ 3A, 10V
Package Type (Mfr.)SOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NVR5124PLT1G is a P-channel MOSFET manufactured by Onsemi, designed specifically for surface mount applications with a compact SOT-23-3 (TO-236) package. It can handle a maximum continuous drain current of 1.1A and a drain-source voltage of up to 60 volts, while dissipating 470 mW of power at ambient temperature conditions. This MOSFET features a low gate-source threshold voltage of 2.5V at a gate current of 250µA and exhibits a total gate charge of 4.3 nC at 10 volts, making it suitable for reliable switching operations in electronic circuits.
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